Integrated Circuits
Data Sheet
ET0418
.025 x .025 Phototransistor Medium Gain
FEATURES
- Spectrally matched to GaAs and GaAlAs emitters
- High sensitivity
- Collector voltage to 30V
DESCRIPTION
The ET0418 phototransistor is fabricated using silicon planar diffused technology. The die is silicon nitride passivated for reliability, and anti-reflection coated to enhance light absorption. Standard thickness is 15 mils. Die can be probed to special beta requirements, and sawed in various array configurations. Applications include optical encoders and industrial controls.
Base Pad DIA .004
ABSOLUTE MAXIMUM RATINGS
| Parameter |
Symbol |
Min. |
Max. |
Units |
Ref. |
| Operating Temperature Range |
TA |
-60 |
125 |
°C |
(Note 1) |
| Collector-Emitter Voltage |
VCE |
- |
30 |
V |
- |
| Emitter-Collector Voltage |
VEC |
- |
6 |
V |
- |
| Power Dissipation |
PD |
- |
50 |
mW |
(Note 1) |
| Continuous Collector Current |
IC |
- |
50 |
mA |
(Note 1) |
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, typical values given at VCE=5V, TA = 25°C, h=0mW/cm2.
| Parameters |
Symbol |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
| Collector Dark Current |
ID |
- |
<10 |
35 |
nA |
VCE = 10V |
| Collector-Emitter Breakdown Voltage |
VCE |
30 |
- |
- |
V |
IC = 100µA |
| Collector-Base Breakdown Voltage |
VCB |
50 |
- |
- |
V |
IC = 100µA |
| Emitter-Base Breakdown Voltage |
VEB |
6.0 |
- |
- |
V |
IE = 100nA |
| Collector-Emitter Saturation Voltage |
VSAT |
- |
85 |
240 |
mV |
IC = 1mA, IB = 50µA, (Note 2) |
| Emitter-Collector Breakdown Voltage |
VEC |
6.0 |
- |
- |
V |
IC = 100µA |
| Responsivity |
R |
- |
.32 |
- |
A/W |
h = 5 mW/cm2 (Note 3) |
| Current Gain |
hFE |
400 |
- |
1000 |
- |
IB = 1µA (Note 2) |
AC SWITCHING CHARACTERISTICS
Values given at VCE = 5V, TA = 25°C, RL = 100 ohms.
| Parameters |
Symbol |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
| Rise Time |
TR |
- |
7 |
- |
s |
(Note 3) |
| Fall Time |
TF |
- |
7 |
- |
s |
(Note 3) |
NOTES:
- This value is very dependent on the thermal impedance of subsequent packaging techniques.
- For test, base current is forced at base pad rather than created by illumination.
- These values are typical for the process and are not tested.
ETIC RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME TO IMPROVE THE DESIGN AND TO SUPPLY THE BEST PRODUCT.
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